Litcius/Paper detail

Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm<sup>2</sup> UV Detection

Yifu Wang, Wenxin Li, Weizong Xu, Feng Zhou, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu

2024IEEE Electron Device Letters11 citationsDOI

Abstract

SiC phototransistor has been widely studied for the weak UV detection, however, is facing with severe limit for the detection of UV light below <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{W}$ </tex-math></inline-formula> /cm2. In this work, reach-through-collector configuration based SiC phototransistor has been demonstrated, where sensitivity of base region to the bias voltage has been largely alleviated, achieving fine control on the neutral zone in the base layer. The tunable gain range for the weak UV light has been extended to over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{8}}$ </tex-math></inline-formula> , while the dark current is kept below 0.5 pA, and the noise figure is as low as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{-{28}}\,\,\text{A}^{{2}}$ </tex-math></inline-formula> /Hz at 10 Hz. These characteristics contribute to a UV-to-visible rejection ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1}.{9}\times {10} ^{{7}}$ </tex-math></inline-formula> and a detectivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${4}.{9}\times {10} ^{{15}}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot $ </tex-math></inline-formula> Hz <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text {1/{2}}}$ </tex-math></inline-formula> /W, enabling a UV detection with power as low as 5 nW/cm2. With additional advantageous dynamic response performance, this reach-through collector based PTD solution paves a way to SiC based ultra-weak UV detection technology.

Topics & Concepts

PhotodiodePhysicsAnalytical Chemistry (journal)OptoelectronicsChemistryChromatographyGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesNanowire Synthesis and Applications
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm<sup>2</sup> UV Detection | Litcius