A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology
Mehrzad Karamimanesh, Ebrahim Abiri, Kourosh Hassanli, Mohammad Reza Salehi, Abdolreza Darabi
Topics & Concepts
Static random-access memoryVoltageComputer sciencePower (physics)Electrical engineeringLow voltageElectronic engineeringNoise marginThreshold voltagePower consumptionEngineeringComputer hardwareTransistorPhysicsQuantum mechanicsLow-power high-performance VLSI designSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design