Understanding Dopant–Host Interactions on Electronic Structures and Optical Properties in Ce‐Doped WS<sub>2</sub> Monolayers
Caixia Ren, Jiangbo Peng, Chen Hu, W. Zhang, Xiaoguang Pan, Hangxin Bai, Yongzheng Wang, Fangli Jing, Hailong Qiu, Yukai An, Zhanggui Hu, Hongjun Liu
Abstract
Abstract Substitutional lanthanide doping of 2D transition metal dichalcogenides (TMDs) is expected to be a promising strategy to engineer optical, electronic, and optoelectronic properties of TMDs. Understanding the interactions between lanthanide dopants and 2D TMDs host is one of the key problems to be resolved for their profound research studies. Herein, the interactions between Ce dopants and monolayer WS 2 in a physical vapor deposition grown Ce‐doped WS 2 monolayer are studied by combining scanning tunneling microscopy with optical characterizations with high spatial and temporal resolution. It is found that the highly anisotropic crystal field can effectively split the energy levels of the Ce dopants’ f orbital. The electrons in the split energy levels can bind the holes in the valence band maximum of the Ce‐doped WS 2 , forming optical bright excitons. These excitons collide with the free A excitons when increasing the pump fluences, reducing the A exciton's lifetime. This study may be beneficial for the design and fabrication of optical, electronic, and optoelectronic devices based on lanthanide‐doped TMDs.