Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices
Xiangde Lin, Yonghai Li, Yanqiang Lei, Qijun Sun
Abstract
Electric double layer (EDL) gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects. A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density (~µF cm−2). Recently, EDL gating technique, as an interfacial gating, is widely used in two-dimensional (2D) crystals for various sophisticated materials characterization and device applications. This review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection, sensing, logic circuits, and neuromorphic computation.