Uniaxial Strain-Controlled Ground States in Manganite Films
Feng Jin, Mingqiang Gu, Chao Ma, Er‐Jia Guo, Jin Zhu, Lili Qu, Zixun Zhang, Kexuan Zhang, Liqiang Xu, Binbin Chen, Feng Chen, Guanyin Gao, James M. Rondinelli, Wenbin Wu
Abstract
Strongly correlated perovskite oxides exhibit a plethera of intriguing phenomena and stimulate a great potential for multifunctional device applications. Utilizing tunable uniaxial strain, rather than biaxial or anisotropic strain, delivered from the crystallography of a single crystal substrate to modify the ground state of strongly correlated perovskite oxides has rarely been addressed for phase-space control. Here, we show that the physical properties of La2/3Ca1/3MnO3 (LCMO) films are remarkably different depending on the crystallographic orientations of the orthorhombic NdGaO3 (NGO) substrates. More importantly, the antiferromagnetic charge-ordered insulating (COI) phase induced in the (100) or (001)-oriented LCMO films can be dramatically promoted (or suppressed) by a uniaxial tensile (or compressive) bending stress along the in-plane [010] direction. By contrast, the COI phase is nearly unaffected along the other transverse in-plane directions. Results from scanning transmission electron microscopy reveal that the (100)- or (001)-oriented LCMO films are uniaxially tensile strained along the [010] direction, while the LCMO/NGO(010) and LCMO/NGO(110) films remaining as a bulklike ferromagnetic metallic state exhibit a different strain state. Density functional theory calculations further reveal that the cooperatively increased Jahn–Teller distortion and charge ordering may be indispensible for the inducing and promoting of the COI phase. These findings provide a path to understand the correlation between local and extended structural distortions imparted by coherent epitaxy and the electronic states for quantum phase engineering.