Improved memory performance of ALD grown HfO2 films by nitrogen doping
Jamal Aziz, Muhammad Farooq Khan, Daniel Neumaier, Muneeb Ahmad, Honggyun Kim, Shania Rehman, Ehsan Elahi, Vijay D. Chavan, Faisal Ghafoor, Kalyani D. Kadam, Harshada Patil, Mohamed Ouladsmane
Topics & Concepts
Resistive random-access memoryMaterials scienceAtomic layer depositionDopingNon-volatile memoryMemristorOptoelectronicsHafniaVoltageConductivityElectrical conductorNeuromorphic engineeringNanotechnologyLayer (electronics)Electronic engineeringElectrical engineeringComputer scienceComposite materialChemistryArtificial neural networkEngineeringCeramicCubic zirconiaMachine learningPhysical chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices