Memtransistor Devices Based on MoS<sub>2</sub> Multilayers with Volatile Switching due to Ag Cation Migration
Matteo Farronato, Margherita Melegari, Saverio Ricci, Shahin Hashemkhani, Alessandro Bricalli, Daniele Ielmini
Abstract
Abstract In the recent years, the need for fast, robust, and scalable memory devices have spurred the exploration of advanced materials with unique electrical properties. Among these materials, 2D semiconductors are promising candidates as they combine atomically thin size, semiconductor behavior, and complementary metal–oxide‐semiconductor compatibility. Here a three‐terminal memtransistor device, based on multilayer MoS 2 with ultrashort channel length, that combines the usual transistor behavior of 2D semiconductors with resistive switching memory operation is presented. The volatile switching behavior is explained by the Ag cation migration along the channel surface. An extensive physical and electrical characterization to investigate the fundamental properties of the device, is presented. Finally, a chain‐type memory array architecture similar to a NAND flash structure consisting of memtransistors is demonstrated, where the individual memory devices can be selected for write and read, paving the way for high‐density, 3D memories based on 2D semiconductors.