Versatile Triboiontronic Transistor <i>via</i> Proton Conductor
Xixi Yang, Jing Han, Jinran Yu, Youhui Chen, Huai Zhang, Mei Ding, Chuankun Jia, Jia Sun, Qijun Sun, Zhong Lin Wang
Abstract
Iontronics are effective in modulating electrical properties through the electric double layers (EDLs) assisted with ionic migration/arrangement, which are highly promising for unconventional electronics, ionic sensory devices, and flexible interactive interface. Proton conductors with the smallest and most abundant protons (H+) can realize a faster migration/polarization under electric field to form the EDL with higher capacitance. Here, a versatile triboiontronic MoS2 transistor via proton conductor by sophisticated combination of triboelectric modulation and protons migration has been demonstrated. This device utilizes triboelectric potential originated from mechanical displacement to modulate the electrical properties of transistors via protons migration/accumulation. It shows superior electrical properties, including high current on/off ratio over 106, low cutoff current (∼0.04 pA), and steep switching properties (89 μm/dec). Pioneering noise tests are conducted to the tribotronic devices to exclude the possible noise interference introduced by mechanical displacement. The versatile triboiontronic MoS2 transistor via proton conductor has been utilized for mechanical behavior derived logic devices and an artificial sensory neuron system. This work represents the reliable and effective triboelectric potential modulation on electronic transportation through protonic dielectrics, which is highly desired for theoretical study of tribotronic gating, active mechanosensation, self-powered electronic skin, artificial intelligence, etc.