4H-SiC Super-Junction JFET: Design and Experimental Demonstration
Hengyu Wang, Ce Wang, Baozhu Wang, Na Ren, Kuang Sheng
Abstract
The silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process. The fabricated super-junction JFET achieves a breakdown voltage of 1000V with specific on-resistance of 1.3mΩ ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) is stable over a wide range of temperature with less than 0.2V shift from 25°C to 175°C. These results demonstrate that the trench-etching and sidewall-implantation technology is a promising option to fabricate SiC super-junction devices. These devices could have great potential for future power electronics.