Improved photovoltaic properties of dye sensitized solar cell by irradiations of Ni <sup>2+</sup> ions on Ag‐doped <scp> TiO <sub>2</sub> </scp> photoanode
M.I. Khan, Nisar Fatima, Ghulam Mustafa, Mudassar Sabir, Samar A. Abubshait, Haya A. Abubshait, Thamraa Alshahrani, Munawar Iqbal, A. Laref, Maarij Baig
Abstract
Using the dip-coating technique we report here the synthesis of pure and 1% Ag-doped TiO2 thin films. The 1% Ag-doped TiO2 films are then irradiated with Ni ions at different (2 × 1014, 4 × 1014, and 6 × 1014 ions/cm2) fluences. Structural analysis carried out using the X-ray diffraction technique revealed the evolution of anatase phase in addition to rutile traces. The corresponding lattice parameters (a and c) first increases with doping and irradiation of Ni ions up to 4 × 1014 ions/cm2 which then decreases on a further increase of fluence. UV-visible spectroscopy shows a decreasing behavior of band gap energy (Eg) with doping. The minimum value of Eg is 3.1 eV which is obtained when 4 × 1014 ions/cm2 of Ni ions are implanted on 1% Ag-TiO2 film. These films are tested as a photoanode for dye sensitized solar cells (DSSCs) and calculate their efficiency. The cell formed by Ni ions implanted on 1% Ag-TiO2 as photoanode with fluence of 4 × 1014 ions/cm2 showed the highest current density of 6.13 mA/cm2 with maximum efficiency of 3.01%.