Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)
Marlene Camacho-Reynoso, Carlos A. Hernández‐Gutiérrez, C. M. Yee‐Rendón, C. Rivera-Rodríguez, D. Bahena-Uribe, S. Gallardo‐Hernández, Yuriy Kudriavtsev, M. López‐López, Y.L. Casallas-Moreno
Topics & Concepts
Molecular beam epitaxyQuantum wellHeterojunctionX-ray photoelectron spectroscopyMaterials scienceEpitaxyOptoelectronicsPhotoluminescenceMetastabilitySubstrate (aquarium)Condensed matter physicsChemistryOpticsNanotechnologyPhysicsNuclear magnetic resonanceLaserOrganic chemistryLayer (electronics)GeologyOceanographyGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials