Optically Rewritable Memory in a Graphene–Ferroelectric-Photovoltaic Heterostructure
Dmytro Kundys, A. Cascales, A. S. Makhort, H. Majjad, F. Chevrier, Bernard Doudin, Alessandro Fedrizzi, B. Kundys
Abstract
Achieving optical operation of logic elements, especially those that involve two-dimensional (2D) layers, could kick-start the long-awaited era of optical computing. However, efficient optical modulation of the electronic properties of 2D materials, including the rewritable memory effect, is currently lacking. Here we report all-optical control of the conductivity of graphene with write-erase operation yet under ultralow optical fluence. The competition between light-induced charge generation in a ferroelectric-photovoltaic substrate and relaxation processes provides the selective photocarrier-trapping control affecting the doping of the 2D overlayer. These findings open the way to photonic control of 2D devices for all-optical modulators, a variety of all-optical logic circuits, memories, and field-effect transistors.