Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory
Li Liu, Hao Wang, Qilong Wu, Kang Wu, Yuan Tian, Haitao Yang, Cheng Min Shen, Lihong Bao, Zhihui Qin, Hong‐Jun Gao
Abstract
Ferroelectric field-effect transistors (FeFET) with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology. Herein, we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS2 with ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films. The ReS2 FeFET using hBN as substrate shows a large memory window of ∼ 30 V. Repeated write/erase operations are successfully performed by applying pulse voltage of ±25 V with 1 ms width to the ferroelectric P(VDF-TrFE), and an ultra-high write/erase ratio of ∼ 107 can be achieved. Furthermore, the ReS2 FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles. These characteristics highlight that such ferroelectric-gated nonvolatile memory has great potential in future non-volatile memory applications.