Litcius/Paper detail

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Md. Abdul Kaium Khan, Mohammad A. Alim, Christophe Gaquière

2021Microelectronic Engineering44 citationsDOI

Topics & Concepts

High-electron-mobility transistorMaterials scienceOptoelectronicsTransistorGallium nitrideWide-bandgap semiconductorLayer (electronics)NanotechnologyElectrical engineeringVoltageEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties