Research progress on the epitaxial growth of hexagonal boron nitride on different substrates by the CVD method
Zikang Li, Zanbo Wang, Quan Zhang, Xiaoqi Bai, Lingxiang Peng, Chuntai Liu, Zhiqiang Yao
Abstract
Hexagonal boron nitride (h-BN) has a hexagonal structure similar to graphene, comprising alternating boron and nitrogen atoms. This unique structure endows h-BN with a plethora of excellent properties, including a low dielectric constant, elevated thermal and chemical stability, substantial mechanical rigidity, and an exceptionally low friction coefficient, rendering it versatile across a spectrum of applications ranging from semiconductors to aerospace. Moreover, its smooth surface, absence of dangling bonds, and wide band gap make h-BN an optimal substrate and gate dielectric material for two-dimensional electronic devices. This article details the synthesis methodologies and research progress of h-BN epitaxial growth on solid transition metal, liquid metal, alloy, sapphire/metal and semiconductor substrates. In particular, progress in improving the quality and functionality of h-BN films by adapting processes and substrates has been rigorously reviewed. Finally, the characteristics of different substrates are summarized and the challenges faced by h-BN in future applications are discussed.