Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetectors
Zhaoying Xi, Zeng Liu, Sihan Yan, Maosheng Liu, Jia‐Han Zhang, Xin Guo, Lei Li, Wanyu Ma, Shan Li, Lili Yang, Mingming Jiang, Weihua Tang
Abstract
Rising wide bandgap semiconductor gallium oxide (Ga 2 O 3 ) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga 2 O 3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (In x Ga 1– x ) 2 O 3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70–4.99 eV is achieved by varying the In-doping content. Alloy-based metal–semiconductor–metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga 2 O 3 photodetectors, with a photo-to-dark current ratio as high as 10 6, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.