Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation
Wenqi Wei, Jingzhi Huang, Zitao Ji, Dong Han, Bo Yang, Jiajian Chen, Jiale Qin, Yiou Cui, Zihao Wang, Ting Wang, Jianjun Zhang
Abstract
Abstract Direct epitaxial growth of III–V quantum dot (QD) lasers on Si (001) substrates is recognized as a promising and low-cost method for realizing high-performance on-chip light sources in silicon photonic integrated circuits (PICs). Recently, the CMOS-compatible patterned Si (001) substrates with sawtooth structures have been widely implemented to suppress the lattice mismatch induced defects and antiphase boundaries for heteroepitaxial growth of high-quality III–V materials on Si. Considerable progresses have been made on high-performance 1300 nm InAs/GaAs QD lasers on Si (001). Here, we report a thermal stress-relaxed (111)-faceted silicon hollow structures by homoepitaxial method for reliable InAs/GaAs QD lasers growing on Si (001) substrates. Both simulation analysis and experimental results indicate that the voids buried below the sawtooth structures can release about 9% of the accumulative thermal stress of the III–V/Si system during the cooling process. Furthermore, electrically pumped InAs/GaAs QD narrow ridge lasers are grown and fabricated on the specially designed Si (001) platforms with a maximum operation temperature up to 90 °C under continuous-wave operation mode. Additionally, an extrapolated lifetime of over 5300 h is calculated from the reliability test at 65 °C. These results lead toward high-yield, scalable, and reliable III–V lasers on Si (001) substrates for PICs.