Growth of (100) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystal by controlling the capillary behaviors in EFG system
Yun‐Ji Shin, Su-Min Lim, Woon-Hyeon Jeong, Seong Cho, Mee-Hi Choi, Won–Jae Lee, Seong‐Min Jeong, Si‐Young Bae
Abstract
Abstract In this study, a numerical simulation of edge-defined film-fed growth (EFG) was performed to determine the appropriate capillary conditions for Ga 2 O 3 melt. Meniscus and capillary rise were significantly influenced by the design of the die in the EFG system. The ratio of the seed crystal and die width was >0.73 for a die width of 4.4 mm. Narrower slit width resulted in higher capillary rise with longer process time compared with wider slit width. Under conditions consistent with the simulation results, highly crystalline (100) β -Ga 2 O 3 single crystals were successfully achieved.
Topics & Concepts
MeniscusCapillary actionEnhanced Data Rates for GSM EvolutionMaterials scienceSlitDie (integrated circuit)CrystallographyCrystal (programming language)Crystal growthAnalytical Chemistry (journal)OpticsChemistryComposite materialPhysicsNanotechnologyChromatographyComputer scienceTelecommunicationsProgramming languageIncidence (geometry)Ga2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques