An analysis of Schottky barrier in silicene/Ga<sub>2</sub>SeS heterostructures by employing electric field and strain
R. Caglayan, Hüseyin Güler, Y. Mogulkoc
Abstract
Under external field effects such as electric field and biaxial strain, the n-type/p-type Schottky barrier transitions of the silicene/Ga 2 SeS heterostructure indicate that device performance can be adjusted with Janus 2D materials.
Topics & Concepts
SiliceneHeterojunctionSchottky barrierElectric fieldMaterials scienceDipoleCondensed matter physicsGrapheneOptoelectronicsCharge (physics)NanotechnologyPhysicsQuantum mechanicsDiodeGraphene research and applications2D Materials and ApplicationsTopological Materials and Phenomena