Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)
Anubha Goel, Sonam Rewari, Seema Verma, Rashmi Gupta
Topics & Concepts
LinearityLeakage (economics)RADIUSIntermodulationMaterials scienceRFICNano-TaperingElectric fieldSiliconOptoelectronicsNanotechnologyElectrical engineeringPhysicsCMOSEngineeringComposite materialComputer scienceQuantum mechanicsComputer graphics (images)MacroeconomicsAmplifierEconomicsComputer securityAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis