Characteristic Charge Collection Mechanism Observed in FinFET SRAM Cells
Kozo Takeuchi, Keita Sakamoto, Kazuki Yukumatsu, Kyota Watanabe, Yuta Tsuchiya, Takashi Kato, Hideya Matsuyama, Akinori Takeyama, Takeshi Ohshima, S. Kuboyama, H. Shindo
Abstract
This article investigates the single-event effects on 16-nm bulk field-effect transistors (FinFETS) in terms of single-bit upsets and multiple-cell upsets under heavy ion irradiation. These upsets are analyzed and classified according to voltage, linear energy transfer of ions, data patterns, and fail bit patterns. The analysis suggested a characteristic charge collection mechanism attributable to the FinFET structure. Estimation of a unique sensitive area shape based on cross sections is also discussed.
Topics & Concepts
Static random-access memoryLinear energy transferCharge (physics)TransistorHeavy ionIonVoltageMechanism (biology)Materials scienceOptoelectronicsSingle event upsetElectronic engineeringTransfer (computing)Energy (signal processing)IrradiationPhysicsElectrical engineeringComputer scienceEngineeringNuclear physicsParallel computingQuantum mechanicsRadiation Effects in ElectronicsVLSI and Analog Circuit TestingIntegrated Circuits and Semiconductor Failure Analysis