Low-energy Ga<sub>2</sub>O<sub>3</sub> polymorphs with low electron effective masses
Qingyang Fan, Ruida Zhao, Wei Zhang, Yanxing Song, Minglei Sun, Udo Schwingenschlögl
Abstract
are direct wide band gap semiconductors (3.60 eV and 3.70 eV, respectively). Simulated X-ray diffraction patterns are provided for experimental confirmation of the predicted structures. The polymorphs turn out to provide low electron effective masses, which is of great benefit to high-power electronic devices.
Topics & Concepts
ElectronLow energyPhysicsMaterials scienceCrystallographyAtomic physicsChemistryNuclear physicsGa2O3 and related materialsAdvanced Photocatalysis TechniquesElectronic and Structural Properties of Oxides