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TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Jeong Hyun Moon, In Ho Kang, Hyoung Woo Kim, Ogyun Seok, Wook Bahng, Min-Woo Ha

2020Current Applied Physics14 citationsDOI

Topics & Concepts

Materials scienceChemical vapor depositionAnnealing (glass)OxideOptoelectronicsGate oxideAnalytical Chemistry (journal)Chemical engineeringTransistorElectrical engineeringComposite materialMetallurgyVoltageChemistryEngineeringChromatographySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvanced ceramic materials synthesis
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing | Litcius