Hydrogen sulphide (H2S) single gas testing on power semiconductor modules under high voltage
Michael Hanf, J.-H. Peters, Sven Clausner, Nando Kaminski
Abstract
In some applications or environments, power semiconductor devices are exposed to hydrogen sulphide (H2S). The degradation mechanisms triggered under these circumstances have been reported already, but the degradation dynamics, the acceleration factors and the impact on the service life of the affected devices are not yet fully understood. There are no standard test methods available for power semiconductor devices and therefore, a test campaign with highly corrosive climatic conditions was started to investigate the degradation mechanisms under high voltage.
Topics & Concepts
SemiconductorDegradation (telecommunications)Semiconductor devicePower (physics)VoltageMaterials scienceService lifePower semiconductor deviceHydrogen sulphideHydrogenHigh voltageElectrical engineeringAccelerationEngineering physicsOptoelectronicsReliability engineeringEngineeringNanotechnologyChemistryMetallurgyPhysicsOrganic chemistryClassical mechanicsQuantum mechanicsSulfurLayer (electronics)High voltage insulation and dielectric phenomenaSemiconductor materials and devicesPower Transformer Diagnostics and Insulation