Litcius/Paper detail

Pressure-induced bandgap engineering of lead-free halide double perovskite (NH<sub>4</sub>)<sub>2</sub>SnBr<sub>6</sub>

Jiaxiang Wang, Lingrui Wang, Fei Wang, Sheng Jiang, Haizhong Guo

2021Physical Chemistry Chemical Physics16 citationsDOI

Abstract

cations in pressure-induced bandgap engineering, thus providing important information for application in optoelectronic devices and helping to design ideal materials with higher efficiency.

Topics & Concepts

HalidePerovskite (structure)Band gapLead (geology)Materials scienceChemistryInorganic chemistryOptoelectronicsCrystallographyGeologyGeomorphologyPerovskite Materials and ApplicationsAdvancements in Solid Oxide Fuel CellsThermal Expansion and Ionic Conductivity
Pressure-induced bandgap engineering of lead-free halide double perovskite (NH<sub>4</sub>)<sub>2</sub>SnBr<sub>6</sub> | Litcius