Litcius/Paper detail

Effect of cobalt on the photovoltaic properties of zinc selenide thin film deposited on fluorine-doped tin oxide (FTO) via electrochemical deposition technique

Imosobomeh L. Ikhioya, Cyril O. Ugwuoke, Donald N. Okoli, Azubuike J. Ekpunobi, M. Maaza, Fabian I. Ezema

2022Current Research in Green and Sustainable Chemistry19 citationsDOIOpen Access PDF

Abstract

This paper provides a detailed report on the effect of molar concentration on structural, optical and electrical properties of cobalt doped zinc selenide (ZnSe:Co) thin film. The molar concentration Co dopant was varied within 0%, 0.1%, 0.2% and 0.3%. ZnSe:Co was synthesized using the electrodeposition method. Different characterization techniques such as X-ray diffractometry, scanning electron microscope and four-point probe were used to study the optical, surface morphology and electrical properties of ZnSe:Co. The XRD analysis revealed that both Co-doped and undoped ZnSe are crystalline materials. The crystalline structure of ZnSe is cubic but changes to a face-centred cubic structure upon introduction of Co dopant. ZnSe:Co showed excellent absorbance, optical conductivity and refractive index. The energy bandgap was observed to decrease from 2.2 - 2.0 eV as the molar percentage increased from 0.1 – 0.3%. The conductivity of the cobalt doped Zinc selenide was observed to be 1.4244×1011, 1.6655×1011, 1.6655×1011, and 2.4929×1011 (S/m) for film grown with 0%, 0.1%, 0.2% and 0.3% Co dopant respectively.

Topics & Concepts

DopantMaterials scienceBand gapZinc selenideDopingScanning electron microscopeTin oxideZincCobaltChemical bath depositionCobalt oxideThin filmAnalytical Chemistry (journal)SelenideConductivityInorganic chemistryNanotechnologyOptoelectronicsChemistryMetallurgyPhysical chemistrySeleniumComposite materialChromatographyQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsSemiconductor materials and interfaces