Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> nanodevices
Zhe Ying, Shuai Zhang, Bo Chen, Bin Jia, Fucong Fei, Minhao Zhang, Haijun Zhang, Xuefeng Wang, Fengqi Song
Abstract
We study the dissipationless transport properties of chiral edge state (CES) in the Chern insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ devices. A near-zero longitudinal resistance and a quantized Hall plateau $\ensuremath{\sim}0.97h/{e}^{2}$ up to 22 K are observed. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping (6 \ensuremath{\sim} 22 K) and thermal activation $(>22\phantom{\rule{0.16em}{0ex}}\mathrm{K})$. This indicates nondissipation as well as the chirality of the edge state, in conjunction with the nonlocal measurements. At 2 K, a current of over 1.4 \ensuremath{\mu}A could break the dissipationless transport. Besides, it is found that a $p\text{\ensuremath{-}}n$ junction has almost no influence upon the CES of Chern insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$. These present a comprehensive picture of the CES transport in this newly emerging material.