Analog Memcapacitor by Ferroelectric Capacitor and Its Application to Spiking Neuromorphic System
Yuma Ishisaki, Reon Oshio, Takumi Kuwahara, Michihiro Shintani, Eisuke Tokumitsu, Tokiyoshi Matsuda, Hidenori Kawanishi, Yasuhiko Nakashima, Mutsumi Kimura
Abstract
An analog memcapacitor has been created by a ferroelectric capacitor. Since the memcapacitor is a capacitor, the power consumption is not dissipated at all in principle. The device structure is that a ferroelectric layer is sandwiched between the bottom electrode and the top electrode. The analog memcapacitor characteristic is realized, namely, varying Vmax is applied, and the capacitance is strongly dependent on it. The working principle can be explained by the operating point analysis for the intrinsic property of the ferroelectric layer. If the memcapacitors are implemented in neuromorphic systems, it is expected that the power consumption will be remarkably reduced. It has been simulated that the spiking neuromorphic system dissipates only 6.24 nJ/Inference for MNIST inference with acceptable accuracy, which is much lower than other systems.