Millimeter-Wave Band CMOS RF Phased-Array Transceiver IC Designs for 5G Applications
H.-C. Park, Daehyun Kang, Juyul Lee, Donggyu Minn, Yuuichi Aoki, Kyu Hong Kim, S. Lee, Dae‐Young Lee, S. Kim, Jongyun Kim, W. Lee, C. Kim, S. Park, Jongsun Park, Bohee Suh, Jaehyuk Jang, M. Kim, K. Min, Sanghyun Jeon, An-Sang Ryu, Y. Kim, J. H. Lee, Jaeman Son, Sung-Gi Yang
Abstract
This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</inf> , stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1,024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</inf> /Ch. of >6.0dBm at EVM of -34dB (800MHz) and P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DC</inf> /Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DC</inf> /Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.