Litcius/Paper detail

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Zheyang Zheng, Li Zhang, Wenjie Song, Tao Chen, Sirui Feng, Yat Hon Ng, Jiahui Sun, Han Xu, Song Yang, Jin Wei, Kevin J. Chen

2021IEEE Electron Device Letters32 citationsDOI

Abstract

GaN <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel field-effect transistors ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -FETs) are essential components for implementing the energy-efficient complementary logic circuitry for monolithic GaN power integration. This letter reports the threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\mathrm {TH}}$ </tex-math></inline-formula> ) instability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel GaN MOSFETs with Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as the gate dielectric. When the gate-to-source bias sweeps toward the negative direction, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\mathrm {TH}}$ </tex-math></inline-formula> exhibits a shift toward more negative values. The impacts of such <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\mathrm {TH}}$ </tex-math></inline-formula> instability on GaN complementary logic circuits are characterized using logic inverters and ring oscillators. It is shown that impacts on circuit functions are limited with an operating voltage swing below 5 V. However, the propagation delay could be gradually prolonged, as a result of the drifting <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\mathrm {TH}}$ </tex-math></inline-formula> .

Topics & Concepts

NotationAlgorithmMathematicsArithmeticGaN-based semiconductor devices and materialsZnO doping and propertiesSemiconductor Quantum Structures and Devices