Reducing trap density and carrier concentration by a Ge additive for an efficient quasi 2D/3D perovskite solar cell
Chi Huey Ng, Kengo Hamada, Gaurav Kapil, Muhammad Akmal Kamarudin, Zhen Wang, Satoshi likubo, Qing Shen, Kenji Yoshino, Takashi Minemoto, Shuzi Hayase
Abstract
The incorporation of the GeI<sub>2</sub> additive in novel quasi-2D/3D Sn perovskites suppresses Sn<sup>2+</sup> oxidation and trap densities, thus enhancing the carrier dynamics of the perovskite materials.
Topics & Concepts
Perovskite (structure)Trap (plumbing)Perovskite solar cellSolar cellMaterials scienceCharge-carrier densityChemical physicsOptoelectronicsChemistryCrystallographyPhysicsDopingMeteorologyPerovskite Materials and ApplicationsConducting polymers and applicationsOrganic Electronics and Photovoltaics