Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5  dB net gain

Abstract

We demonstrate 5 dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide. The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultra-low losses and mature, reliable, and low-cost fabrication methods of silicon nitride waveguide technology. We show that the waveguide platform demonstrates low background propagation losses of 0.25 dB/cm based on a ring resonator device with a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:mi>Q</mml:mi> </mml:mrow> </mml:math> factor of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m2"> <mml:mrow> <mml:mn>1.3</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mn>6</mml:mn> </mml:msup> </mml:mrow> </mml:math> at 1640 nm. We measure 5 dB peak net gain at 1558 nm and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m3"> <mml:mrow> <mml:mo form="prefix">&gt;</mml:mo> <mml:mn>3</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>dB</mml:mi> </mml:mrow> </mml:math> of net gain across the C band in a 6.7 cm long waveguide for 35 mW of launched 1470 nm pump power. Gain per unit length of 1.7 and 1.4 dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths, respectively. Amplifier simulations predict that <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m4"> <mml:mrow> <mml:mo form="prefix">&gt;</mml:mo> <mml:mn>10</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>dB</mml:mi> </mml:mrow> </mml:math> gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling. These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.

Topics & Concepts