Synergistic Additive‐Assisted Growth of 2D Ternary In<sub>2</sub>SnS<sub>4</sub> with Giant Gate‐Tunable Polarization‐Sensitive Photoresponse
Nian Zuo, Anmin Nie, Chunguang Hu, Wanfu Shen, Bao Jin, Xiaozong Hu, Zhongyuan Liu, Xing Zhou, Tianyou Zhai
Abstract
Abstract 2D ternary materials exhibit great promise in the field of polarization‐sensitive photodetectors due to the low‐symmetry crystal structure. However, the realization of ternary material growth is still a huge challenge because of the complex reaction process. Here, for the first time, 2D ternary In 2 SnS 4 flakes are obtained via synergistic additive of salt and molecular sieve‐assisted chemical vapor deposition. Raman vibration mode of In 2 SnS 4 flakes exhibits polarization‐dependent properties. The polarization‐resolved absorption spectroscopy and azimuth‐dependent reflectance difference microscopy further confirm its anisotropy of in‐plane optical absorption and reflection. Besides, the In 2 SnS 4 flake based device on mica shows ultrafast rising and decay rates of ≈20 and 20 µs. Impressively, In 2 SnS 4 flake based phototransistor demonstrates giant gate‐tunable polarization‐sensitive photoresponse: the dichroic ratio can be adjusted in the range of 1.13–1.70 with gate voltage varying from −35–35 V. This work provides an effective means for modulating the polarization‐sensitive photoresponse, which may significantly promote the research progress of polarization‐sensitive photodetectors.