Does carrier velocity saturation help to enhance <i>f</i><sub>max</sub> in graphene field-effect transistors?
Pedro C. Feijoo, Francisco Pasadas, Marlene Bonmann, Muhammad Asad, Xinxin Yang, Andrey Generalov, Andrei Vorobiev, Luca Banszerus, Christoph Stampfer, Martin Otto, Daniel Neumaier, Jan Stake, David Jiménez
Abstract
A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.
Topics & Concepts
Saturation (graph theory)Velocity saturationSaturation velocitySaturation currentMaterials scienceDrift velocityTransistorGrapheneBiasingDiffusionCondensed matter physicsNanotechnologyPhysicsElectric fieldVoltageMOSFETThermodynamicsCombinatoricsQuantum mechanicsMathematicsGraphene research and applicationsAdvancements in Semiconductor Devices and Circuit DesignQuantum and electron transport phenomena