ALD Al<sub>2</sub>O<sub>3</sub> gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT
Kuan‐Yu Chen, Chih-Chiang Yang, Chun-Yuan Huang, Yan‐Kuin Su
Abstract
The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.
Topics & Concepts
DielectricTrap (plumbing)Thin-film transistorReduction (mathematics)Materials scienceOptoelectronicsHigh-κ dielectricGate dielectricInterface (matter)Electrical engineeringNanotechnologyTransistorPhysicsEngineeringVoltageMathematicsCapillary numberMeteorologyComposite materialLayer (electronics)Capillary actionGeometryThin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsOrganic Light-Emitting Diodes Research