Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO<sub><i>x</i></sub> tunnel junction memory
Jihyung Kim, Osung Kwon, Eunjin Lim, Dahye Kim, Sungjun Kim
Abstract
pulse-switching measurements. The results indicate that the HAO film annealed at 800 °C for 20 s exhibits an excellent tunneling electro-resistance (TER) ratio of 186% and this is attributed to the extra paraelectric layer formed between the ferroelectric layer and the bottom electrode. The detailed findings of this study are expected to assist in the development of hafnium oxide-based ferroelectric non-volatile memory applications.
Topics & Concepts
FerroelectricityMaterials scienceAnnealing (glass)DielectricQuantum tunnellingForming gasElectrodeOxideDopingOptoelectronicsPolarization (electrochemistry)Titanium nitrideTinNitrideComposite materialLayer (electronics)MetallurgyChemistryPhysical chemistryFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingSemiconductor materials and devices