Litcius/Paper detail

Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices

N. Arun, S. V. S. Nageswara Rao, A. P. Pathak

2022Journal of Electronic Materials24 citationsDOI

Topics & Concepts

Resistive random-access memoryElectrodeMaterials scienceThermal conductionOptoelectronicsLayer (electronics)Metal-insulator-metalResistive touchscreenReset (finance)MetalVoltageMemristorNanotechnologyElectrical engineeringComposite materialChemistryCapacitorMetallurgyEngineeringEconomicsPhysical chemistryFinancial economicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices
Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices | Litcius