Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing
Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom, Shaurya Dabas, Jinghan Gao, Jiangnan Liu, Zhengwei Ye, V. Gaddam, Aiden Ross, Long‐Qing Chen, Honggyu Kim, Roozbeh Tabrizian, Zetian Mi
Abstract
Incorporating rare-earth elements into wurtzite nitride semiconductors, such as scandium-alloyed aluminum nitride (ScAlN), significantly enhances the piezoelectric response, which is vital for a broad range of acoustic, electronic, photonic, and quantum applications. To date, however, the measured piezoelectric response of nitride semiconductors is far below what theory has predicted. Herein, we demonstrate a simple, scalable, post-growth thermal annealing process that can dramatically boost the piezoelectric response of ScAlN. We achieve a 3.5-fold increase in the piezoelectric modulus, d33 for ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN commercially used in 5 G cellphones. The observed enhancement is unambiguously confirmed by three separate measurement techniques. Detailed material characterization techniques reveal that optimized annealing conditions significantly improve the macroscopic structural quality, achieving a more homogeneous and ordered domain orientation, and reduces the lattice parameter ratio (c/a) in the wurtzite crystal structure. The dramatic enhancement of d33 in ScAlN thin films promises extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond-5 G applications. The authors present a process that boosts the piezoelectric properties of ScAlN thin films by 3.5 times, enhancing their performance for use in acoustic devices. The technique is scalable, cost effective, and could enable advanced sensors, clocks, and communication technologies.