7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer
Sheng Zhang, Wei Ke, Yichuan Zhang, Xiaojuan Chen, Sen Huang, Guoguo Liu, Yingkui Zheng, Tingting Yuan, Xinhua Wang, Yankui Li, Jiebin Niu, Xinyu Liu
Abstract
Plasma enhanced atomic layer deposition (PEALD) SiN gate dielectric is performed on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT). The fabricated MIS-HEMTs with 5 nm SiN gate dielectric layer exhibits a tiny threshold voltage hysteresis (~ 0.04 V), sufficiently decreased leakage current of ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−9</sup> A/mm at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}} =-{60}$ </tex-math></inline-formula> V and good threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) stability even measured at 200 °C. The increased mobility of 2-D electron gas (2-DEG) and suppressed current collapse are demonstrated, thereby producing a power density of 7.05 W/mm with an associated 34.0 % power-added efficiency (PAE) and a peak PAE of 51.4 % in a continuous-wave mode at 30 GHz.