Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices
Anastasia Chouprik, Ekaterina Kondratyuk, Vitalii Mikheev, Yu. Matveyev, Maxim Spiridonov, Аnna G. Chernikova, Maxim G. Kozodaev, Andrey M. Markeev, A. Zenkevich, Dmitrii Negrov
Topics & Concepts
Materials scienceFerroelectricityCapacitorNon-volatile memoryOptoelectronicsX-ray photoelectron spectroscopyCapacitanceData retentionOxideRetention timeSemiconductor memoryNanotechnologyElectrodeDielectricVoltageElectrical engineeringComputer scienceChemical engineeringComputer hardwareMetallurgyChromatographyPhysical chemistryEngineeringChemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing