cnot Gates for Fluxonium Qubits via Selective Darkening of Transitions
Konstantin Nesterov, Chen Wang, Vladimir Manucharyan, Maxim Vavilov
Abstract
We analyze the cross-resonance effect for fluxonium circuits and investigate a two-qubit gate scheme based on selective darkening of a transition. In this approach, two microwave pulses at the frequency of the target qubit are applied simultaneously with a proper ratio between their amplitudes to achieve a controlled-not operation. We study in detail coherent gate dynamics and calculate gate error. With nonunitary effects accounted for, we demonstrate that gate error below ${10}^{\ensuremath{-}4}$ is possible for realistic hardware parameters. This number is facilitated by long coherence times of computational transitions and strong anharmonicity of fluxoniums, which easily prevents excitation to higher excited states during the gate microwave drive.