Onset of ring defects in n-type Czochralski-grown silicon wafers
Rabin Basnet, Sieu Pheng Phang, Chang Sun, Fiacre Rougieux, Daniel Macdonald
Abstract
This paper presents experimental studies on the formation of ring defects during high-temperature annealing in both electronic-grade and upgraded metallurgical-grade (UMG) Czochralski-grown silicon wafers. Generally, a faster onset of ring defects, or shorter incubation time, was observed in the UMG samples ([Oi] = 6.3 × 1017 cm−3) in comparison to the electronic-grade samples ([Oi] = 3.9 × 1017 cm−3) used in this work. By applying a tabula rasa (TR) treatment prior to annealing, the incubation time can be increased for both types of wafers. We show that TR temperatures above 1000 °C are necessary to effectively dissolve grown-in oxygen precipitate nuclei and limit the subsequent formation of ring defects. A 30 min TR treatment at 1000 °C resulted in the longest incubation time for both types of samples used in this work, as it achieved the best balance between precipitate nuclei dissolution and precipitate re-growth/ripening. Finally, a nitrogen ambient TR step showed a short incubation time for the formation of ring defects in comparison to an oxygen ambient TR step.