MOCVD of AlN on epitaxial graphene at extreme temperatures
A. Kakanakova‐Georgieva, Ivan G. Ivanov, Nattamon Suwannaharn, Chih‐Wei Hsu, Ildikó Cora, B. Pécz, Filippo Giannazzo, Davide G. Sangiovanni, Gueorgui K. Gueorguiev
Abstract
Appearance of luminescent centers with narrow spectral emission at room temperature in nanometer thin AlN is reported.
Topics & Concepts
Materials scienceNanometreMetalorganic vapour phase epitaxyEpitaxyGrapheneOptoelectronicsLuminescenceNanotechnologyComposite materialLayer (electronics)GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties