Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
Peng Cui, Yuping Zeng
Topics & Concepts
Materials scienceOptoelectronicsHigh-electron-mobility transistorTransistorLeakage (economics)Drain-induced barrier loweringCutoff frequencyIonSubstrate (aquarium)SiliconThreshold voltageElectrical engineeringVoltageChemistryGeologyOceanographyEngineeringMacroeconomicsEconomicsOrganic chemistryGaN-based semiconductor devices and materialsSemiconductor materials and devicesRadio Frequency Integrated Circuit Design