Thermoelectric properties of n‐type SiGe alloys with Sn incorporation
Ke Meng, La-Mei Zhao, Ningyuan Zhang, Zhuangfei Zhang, Weixia Shen, Yuewen Zhang, Biao Wan, Chao Fang, Liangchao Chen, Qianqian Wang, Julong He, Xiaopeng Jia
Abstract
Abstract In the past several decades, silicon germanium (SiGe) bulk alloys have been a research focus in addressing the current global energy crisis and environmental pollution problems due to their excellent high‐temperature thermoelectric properties. In this study, n‐type Si 80 Ge 20 P 2 Sn x bulk alloys were fabricated by spark plasma sintering (SPS) to investigate the effect of Sn incorporation. In addition, the optimal sintering conditions and Sn content were determined. The introduction of Sn improves the electrical conductivity and power factor of the n‐type SiGe bulk alloys due to the doping and composite effects. Particularly, the Si 80 Ge 20 P 2 Sn 2 bulk alloy could reach a high figure of merit ( ZT ) value of ~ 1.26 at 800 °C. Thus, this work provides a quick preparation method for obtaining n‐type SiGe bulk alloys with outstanding thermoelectric properties by incorporating Sn, which is favorable for large‐scale production.