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Design of a Highly Efficient Class-F GaN MMIC Power Amplifier Using a Multi-Function Bias Network and a Harmonic-Isolation L-C Resonator

Jie Shi, Xiaohu Fang, Changning Wei, Tao Lin, Luyu Zhao, Kwok‐Keung M. Cheng

2023IEEE Transactions on Circuits and Systems I Regular Papers10 citationsDOI

Abstract

This paper proposes a new method to design compact and high-efficiency Class-F GaN microwave monolithic integrated circuit (MMIC) based power amplifiers (PAs). Closed-form design equations are derived to synthesize a multi-function bias branch sub-network (BBSN) and a harmonic-isolation matching branch sub-network (MBSN), which together form a network that is capable to satisfy the Class-F load condition from fundamental up to the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4^{th}$ </tex-math></inline-formula> harmonic frequency. These equations further assist in analyzing the impact of the finite inductor quality factor on the passive efficiency of the proposed network, yielding design choices that offer both reduced chip size and passive loss. For validation, the proposed method is applied to design a C-band high-efficiency PA in a commercial 0.25 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu {\mathrm{ m}}$ </tex-math></inline-formula> GaN-on-SiC HEMT process. Measurements under pulsed continuous-wave stimulation reveal, the proposed PA is capable of providing saturation output power of 38.5-39.1 dBm and excellent power-added efficiency (PAE) of 61%-70% over 5.3-5.9 GHz with a chip size of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.5\times2.2$ </tex-math></inline-formula> mm2. Moreover, when excited by a 100 MHz 256-QAM signal, the amplifier can offer an average PAE of 33.1-38.2%, adjacent channel power ratio (ACPR) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ &lt; -35$ </tex-math></inline-formula> dBc, error vector magnitude (EVM) of 2.7-3.7%, without applying any digital pre-distortion (DPD).

Topics & Concepts

AmplifierMonolithic microwave integrated circuitHigh-electron-mobility transistorResonatorChipTopology (electrical circuits)Electronic engineeringMathematicsComputer scienceElectrical engineeringEngineeringTransistorCMOSVoltageAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignGaN-based semiconductor devices and materials
Design of a Highly Efficient Class-F GaN MMIC Power Amplifier Using a Multi-Function Bias Network and a Harmonic-Isolation L-C Resonator | Litcius