Vertical metal–dielectric–semiconductor diode on (001) β-Ga<sub>2</sub>O<sub>3</sub> with high-κ TiO<sub>2</sub> interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown
Nolan S. Hendricks, Esmat Farzana, Ahmad E. Islam, Kevin Leedy, Kyle J. Liddy, Jeremiah C. Williams, Daniel M. Dryden, Aaron M. Adams, James S. Speck, Kelson D. Chabak, Andrew J. Green
Abstract
Abstract We demonstrate vertical Pt/TiO 2 / β -Ga 2 O 3 metal–dielectric–semiconductor (MDS) diodes and compare performance with co-fabricated Pt/ β -Ga 2 O 3 Schottky diodes (SBDs). The MDS diode exhibits a lower turn-on voltage and leakage current. In addition, the breakdown voltage increased from 548 V for an SBD to 1380 V for a MDS diode. The improvement in the off-state characteristics compared to a SBD while simultaneously reducing on-state losses leads to lower power dissipation at all duty cycles, indicating the great promise of this device architecture for advancing low-loss β -Ga 2 O 3 rectifiers toward material limits.