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Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Ivana Capan, Tomislav Brodar, Yuichi Yamazaki, Yuya Oki, Takeshi Ohshima, Yoji Chiba, Yasuto Hijikata, Luka Snoj, Vladimir Radulović

2020Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms32 citationsDOIOpen Access PDF

Topics & Concepts

Deep-level transient spectroscopyMaterials scienceAtomic physicsConduction bandVacancy defectElectronSiliconIrradiationPenning trapNeutronCondensed matter physicsNuclear physicsPhysicsOptoelectronicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesSilicon and Solar Cell Technologies
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC | Litcius