A novel solution to improve saddle-shape warpage in 3D NAND flash memory
Dandan Shi, Zhiliang Xia, Ming Hu, Guozhu Mei, Zongliang Huo
Abstract
Abstract It is difficult to adjust asymmetrically saddle-shape wafer warpage resulted from high-stress material in 3D NAND Flash memory. This paper proposes a novel method that the suitable trenches on the backside of wafer is formed to improve saddle-shape warpage asymmetrically. Effects of different trench pitches, CDs and depths are studied by FEM (finite element method) simulation. This solution provides an instruction for solving warpage in 3D NAND flash memory manufacturing.
Topics & Concepts
SaddleNAND gateFlash (photography)Shape-memory alloyFlash memoryMaterials scienceComputer scienceOptoelectronicsComputer hardwareMechanical engineeringComposite materialOpticsAlgorithmPhysicsEngineeringLogic gateThin-Film Transistor Technologies3D IC and TSV technologiesAdvanced Surface Polishing Techniques