Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED
Muhammad Nawaz Sharif, M. Ajmal Khan, Qamar Wali, Khalid Ayub, Malika Rani, Fang Wang, Yuhuai Liu
Topics & Concepts
OptoelectronicsQuantum tunnellingMaterials scienceVoltage droopDopingLight-emitting diodeQuantum efficiencyQuantum wellUltravioletDiodeLayer (electronics)OpticsNanotechnologyLaserPower (physics)PhysicsQuantum mechanicsVoltage dividerGaN-based semiconductor devices and materialsPhotocathodes and Microchannel PlatesGa2O3 and related materials